Free carrier absorption and lifetime mapping in 4H SiC epilayers

被引：22

作者：

Galeckas, A

Grivickas, V

Linnros, J

Bleichner, H

Hallin, C

机构：

[1] ABB,CORP RES,SWEDISH IND MICROELECT CTR,S-16440 STOCKHOLM,SWEDEN

[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[3] VILNIUS STATE UNIV,INST MAT RES & APPL SCI,LT-2054 VILNIUS,LITHUANIA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.365050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results of carrier lifetime studies in low-doped epitaxial 4H SiC layers are reported. The free carrier absorption (HCA) technique was applied to extract. carrier lifetime parameters and their spatial distribution in a wide photoexcitation range. The FCA magnitude is shown to scale linearly with the photoinjected carrier concentration while the absorption cross section increases according to a lambda(4.4) law for near infrared wavelengths. High spatial resolution carrier lifetime mapping of large 4H SiC areas revealed features related to structural imperfections of epilayers, Finally, a density dependent fast lifetime component was observed at high injection levels and attributed to band-to-band Auger recombination. (C) 1997 American Institute of Physics.

引用

页码：3522 / 3525

页数：4

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