A STUDY OF CARRIER LIFETIME IN SILICON BY LASER-INDUCED ABSORPTION - A PERPENDICULAR GEOMETRY MEASUREMENT

被引:29
作者
GRIVICKAS, V
LINNROS, J
VIGELIS, A
SECKUS, J
TELLEFSEN, JA
机构
[1] ROYAL INST TECHNOL,DEPT PHYS,S-10044 STOCKHOLM 70,SWEDEN
[2] VILNIUS UNIV,DEPT SEMICOND PHYS,VILNIUS 232054,LITHUANIA,USSR
关键词
D O I
10.1016/0038-1101(92)90233-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we describe an innovative and improved measurement of carrier lifetime in Si when i.r. laser-induced absorption is applied in perpendicular geometry. Carrier lifetime depth-distributions can be examined in one measurement for a wide range of injection levels, 10(11)-10(17) cm-3. We emphasize the capacity of distinguishing different recombination mechanisms and the determination of recombination lifetime reduction after certain sample treatment procedures. Examples of in-depth, non-homogeneous lifetime changes after wafer sawing and intrinsic gettering treatments are presented. The developed technique has important advantages in comparison with thickness-averaged carrier lifetimes obtained with conventional measurement techniques where different specific injection levels are usually imposed.
引用
收藏
页码:299 / 310
页数:12
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