CORRELATION OF PRECIPITATION DEFECTS AND GOLD PROFILES IN INTRINSICALLY GETTERED SILICON

被引：9

作者：

BAGINSKI, TA ^{[1
]}

MONKOWSKI, JR ^{[1
]}

机构：

[1] RADIO SEMICOND INC,STATE COLL,PA 16801

来源：

关键词：

D O I：

10.1149/1.2108671

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：762 / 769

页数：8

共 12 条

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[5]

Gosele U., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P55

[6]

HECK DP, 1984, THESIS PENNSYLVANIA, P33

HU, SM .

[8]

INOVE N, 1982, J ELCHEM SO, V129, P2780

[9] DENUDED ZONE FORMATION IN P LESS-THAN 100 GREATER-THAN SILICON [J].

MURRAY, EM .

REED, CL ;

MAR, KM .