PRECIPITATION OF OXYGEN IN SILICON - SOME PHENOMENA AND A NUCLEATION MODEL

被引：80

作者：

HU, SM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3974 / 3984

页数：11

相关论文

共 35 条

[1] ABE T, 1977, SEMICONDUCTOR SILICO, P95
[2] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS
DEKOCK, AJR
VANDEWIJGERT, WM
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) : 718 - 734
[3] DEKOCK AJR, 1973, 1 PHILL RES REP S
[4] NUCLEATION
FISHER, JC
HOLLOMON, JH
TURNBULL, D
[J]. JOURNAL OF APPLIED PHYSICS, 1948, 19 (08) : 775 - 784
[5] FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON
FOLL, H
KOLBESEN, BO
[J]. APPLIED PHYSICS, 1975, 8 (04): : 319 - 331
[6] PRECIPITATION OF OXYGEN IN SILICON
FREELAND, PE
JACKSON, KA
LOWE, CW
PATEL, JR
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 31 - 33
[7] FULLER CS, 1954, PHYS REV, V96, P833
[8] RESISTIVITY CHANGES IN SILICON SINGLE CRYSTALS INDUCED BY HEAT TREATMENT
FULLER, CS
DITZENBERGER, JA
HANNAY, NB
BUEHLER, E
[J]. ACTA METALLURGICA, 1955, 3 (01): : 97 - 99
[9] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS
FULLER, CS
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436
[10] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN
GRAFF, K
GRALLATH, E
ADES, S
GOLDBACH, G
TOLG, G
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (08) : 887 - 893

← 1 2 3 4 →