THE EFFECTS OF ABRASION GETTERING ON SILICON MATERIAL WITH SWIRL DEFECTS

被引:7
作者
REED, CL
MAR, KM
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D O I
10.1149/1.2130066
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2058 / 2062
页数:5
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共 30 条
[1]  
Bullough R., 1963, PROGR SEMICONDUCTORS, V7, P100
[2]   PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS [J].
BUSTA, HH ;
WAGGENER, HA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1424-1429
[3]  
DEKOCK AJR, 1973, PHILIPS RES REP S1
[4]  
FOLL H, 1977, SEMICONDUCTOR SILICO
[5]   METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].
GOETZBERGER, A ;
SHOCKLEY, W .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824
[6]  
Grove A. S., 1967, PHYS TECHNOLOGY SEMI, P127
[7]  
JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401
[8]   INFLUENCE OF DISLOCATIONS ON DIFFUSION OF GOLD IN SILICON [J].
KASTNER, S ;
HESSE, J .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01) :261-267
[9]  
KOCK AJRD, 1971, J ELECTROCHEM SOC, V118, P1851
[10]  
LANGLEY R, 1971, PRACTICAL STATISTICS, P71