Transport properties of discontinuous Co80Fe20/Al2O3 multilayers, prepared by ion beam sputtering

被引：28

作者：

Kakazei, GN

Freitas, PP

Cardoso, S

Lopes, AML

de Azevedo, MMP

Pogorelova, YG

Sousa, JB

机构：

[1] Univ Porto, IFIMUP, Dept Fis, Fac Ciencias, P-4150 Porto, Portugal

[2] INESC, P-1000 Lisbon, Portugal

[3] Univ Aveiro, Dept Fis, P-3810 Aveiro, Portugal

[4] Inst Super Tecn, Dept Fis, P-1096 Lisbon, Portugal

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

tunnel magnetoresistance; discontinuous multilayers; metal/insulator films;

D O I：

10.1109/20.801017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Ion Beam sputtered Co80Fe20(t)/Al2O3(30 Angstrom) multilayers were obtained. The Co80Fe20 layers become discontinuous for nominal thickness t less than or equal to 18 Angstrom. Tunnel magnetoresistance was measured in CIP and CPP geometries, reaching up to 6.5% at room temperature and 11% at 15 K, for as-deposited films in CIP geometry. The temperature dependence of MR was found quite different for the two geometries: fairly strong in the CIP case and almost absent in the CPP geometry. A model is proposed to explain these large differences in behavior.

引用

页码：2895 / 2897

页数：3

共 7 条

[1]

Spin-dependent tunneling in discontinuous metal/insulator multilayers [J].