The reduction of gate leakage of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors by N2 plasma pretreatment

被引：10

作者：

Feng, Qian ^{[1
]}

Hao, Yue ^{[1
]}

Yue, Yuan-Zheng ^{[1
]}

机构：

[1] Xidian Univ, Inst Microelect, Xian, Shaanxi, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 02期

关键词：

FIELD-EFFECT TRANSISTORS; OXIDE;

D O I：

10.1088/0268-1242/24/2/025030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical performance of an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) with Al2O3 as the gate insulator layers indicated that the gate leakage was decreased by two orders of magnitude after the Al2O3/AlGaN interface was pretreated by N-2 plasma. The Al2O3 thin film was deposited by atomic layer deposition (ALD). Effects of N-2 plasma pretreatment on the electrical and structural properties of the Al2O3/AlGaN interface were investigated by C-V measurements, high-resolution transmission electron microscopy (HRTEM) and x-ray photoelectron spectroscopy (XPS). The C-V measurements showed that the electrical property was improved after N-2 plasma pretreatment, HRTEM measurements indicated that the thickness of an interfacial layer was reduced. XPS analysis confirmed that AlGaN oxides are greatly decreased during N-2 plasma pretreatment.

引用

页数：6

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