BTQBT (bis-(1,2,5-thiadiazolo)-p-quinobis(1, 3-dithiole)) thin films; A promising candidate for high mobility organic transistors

被引:29
作者
Takada, M [1 ]
Graaf, H
Yamashita, Y
Tada, H
机构
[1] Grad Univ Adv Studies, Dept Funct Mol Sci, Okazaki, Aichi 4448585, Japan
[2] Inst Mol Sci, Okazaki, Aichi 4448585, Japan
[3] Tokyo Inst Technol, Dept Elect Sci & Technol, Yokohama, Kanagawa 2268502, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 1AB期
关键词
BTQBT field effect transistor; mobility; ultrahigh vacuum; surface morphology;
D O I
10.1143/JJAP.41.L4
中图分类号
O59 [应用物理学];
学科分类号
摘要
BTQBT (bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole)) Films have been prepared as active semiconducting layers of organic field effect transistors (FETs). BTQBT films showed a p-type semiconducting behavior. The hole mobility and on/off ratio of BTQBT films under ultrahigh vacuum conditions reached to 0.2 cm-(2)/V(.)s and 10(8), respectively. by optimization of the growth conditions. These values are in the same order as those of pentacene thin films. which indicates that BTQBT molecules have a great potential for active layers of organic electronic devices.
引用
收藏
页码:L4 / L6
页数:3
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