Surface effects in layered semiconductors Bi2Se3 and Bi2Te3 -: art. no. 085313

被引：115

作者：

Urazhdin, S ^{[1
]}

Bilc, D

Mahanti, SD

Tessmer, SH

Kyratsi, T

Kanatzidis, MG

机构：

[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

[2] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.69.085313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.

引用

页数：7

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