Electronic structure of Bi2Te3 studied by angle-resolved photoemission

被引:20
作者
Greanya, VA [1 ]
Tonjes, WC
Liu, R
Olson, CG
Chung, DY
Kanatzidis, MG
机构
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
[2] Ames Lab, Ames, IA 50011 USA
[3] Iowa State Univ Sci & Technol, Ames, IA 50011 USA
[4] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA
关键词
D O I
10.1103/PhysRevB.62.16425
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a detailed study of the electronic structure of Bi2Te3, to our knowledge the best room temperature thermoelectric material known to date, using angle-resolved photoemission. Dispersions of the valence bands were determined. A sixfold k-space degeneracy in the valence-band maximum is found. The quasi-two-dimensional nature of the electronic structure was demonstrated by the weakly dispersive bands along the Gamma -Z direction. Experimental results are compared with theoretical band-structure calculations and with de Haas-van Alphen and Shubnikov-de Haas experiments.
引用
收藏
页码:16425 / 16429
页数:5
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