Electronic structure of Bi2Te3 studied by angle-resolved photoemission

被引：20

作者：

Greanya, VA ^{[1
]}

Tonjes, WC

Liu, R

Olson, CG

Chung, DY

Kanatzidis, MG

机构：

[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

[2] Ames Lab, Ames, IA 50011 USA

[3] Iowa State Univ Sci & Technol, Ames, IA 50011 USA

[4] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.62.16425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a detailed study of the electronic structure of Bi2Te3, to our knowledge the best room temperature thermoelectric material known to date, using angle-resolved photoemission. Dispersions of the valence bands were determined. A sixfold k-space degeneracy in the valence-band maximum is found. The quasi-two-dimensional nature of the electronic structure was demonstrated by the weakly dispersive bands along the Gamma -Z direction. Experimental results are compared with theoretical band-structure calculations and with de Haas-van Alphen and Shubnikov-de Haas experiments.

引用

页码：16425 / 16429

页数：5