Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

被引：171

作者：

Shin, Jae-Heon ^{[1
]}

Lee, Ji-Su ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Cheong, Woo-Seok ^{[1
]}

Ryu, Minki ^{[1
]}

Byun, Chun-Won ^{[1
]}

Lee, Jeong-Ik ^{[1
]}

Chu, Hye Yong ^{[1
]}

机构：

[1] Convergence Components & Mat Res Lab, Taejon, South Korea

来源：

ETRI JOURNAL | 2009年 / 31卷 / 01期

关键词：

ZnO; transparent oxide semiconductor; thin film transistor (TFT); bias stability; light effect; PHYSICS;

D O I：

10.4218/etrij.09.0208.0266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shy under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO The is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.

引用

页码：62 / 64

页数：3

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