Hydrogen-induced piezoelectric effects in InPHEMT's

被引:28
作者
Blanchard, RR
del Alamo, JA
Adams, SB
Chao, PC
Cornet, A
机构
[1] MIT, Cambridge, MA 02139 USA
[2] Sanders Lockheed Martin, Nashua, NH 03060 USA
[3] Univ Barcelona, Barcelona, Spain
基金
美国国家科学基金会;
关键词
hydrogen; InPHEMT's; piezoelectric effect; stress; Ti/Pt/Au gates;
D O I
10.1109/55.778153
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we have investigated hydrogen degradation of InP HEMT's with Ti/Pt/Au gates. We have found that V-T shifts negative after exposure to hydrogen, and exhibits an L-G and orientation dependence. We postulate that Delta V-T is at least in part due to the piezoelectric effect, Hydrogen exposure leads to the formation of TiHx, producing compressive stress in the gate. This stress induces a piezoelectric charge distribution in the semiconductor that shifts the threshold voltage, We have independently confirmed TiHx formation under our experimental conditions through Auger measurements. Separate radius-of-curvature measurements have also independently confirmed that Ti/Pt films become compressively stressed relative to their initial state after H-2 exposure.
引用
收藏
页码:393 / 395
页数:3
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