Ultraviolet laser-induced formation of thin silicon oxide film from the precursor β-chloroethyl silsesquioxane

被引：9

作者：

Sharma, J ^{[1
]}

Berry, DH ^{[1
]}

Composto, RJ ^{[1
]}

Dai, HL ^{[1
]}

机构：

[1] Univ Penn, Res Struct Matter Lab, Philadelphia, PA 19104 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 03期

关键词：

D O I：

10.1557/JMR.1999.0132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation of silicon oxide thin films from spin-coated beta-chloroethyl silsesquioxane (beta-cesq) on silicon, NaCl, and quartz was induced by 193 nm laser pulses. The silicon oxide deposition is characterized by ir, uv, ellipsometry, and Rutherford backscattering spectrometry. The silicon oxide films obtained by uv irradiation were found to have much less carbon and chlorine as impurities and have a higher refractive index as compared to those obtained by annealing. The photoinduced oxide films were found to be smooth, without laser-induced microrough or periodic structures.

引用

页码：990 / 994

页数：5

共 14 条

[1] Staged development of modified silicon dioxide films [J].

Arkles, B ;

Berry, DH ;

Figge, LK ;

Composto, RJ ;

Chiou, T ;

Colazzo, H ;

Wallace, WE .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1997, 8 (1-3) :465-469

[2]

Chrisey D. B., 1994, PULSED LASER DEPOSIT

[3]

FIGGE LK, 1996, THESIS U PENNSYLVANI

[4] LOW-TEMPERATURE SYNTHESIS OF SILICON-OXIDE, OXYNITRIDE, AND NITRIDE FILMS BY PULSED EXCIMER-LASER ABLATION [J].

FOGARASSY, E ;

FUCHS, C ;

SLAOUI, A ;

DEUNAMUNO, S ;

STOQUERT, JP ;

MARINE, W ;

LANG, B .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) :2612-2620

[5] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SILICON-OXIDE THIN-FILMS [J].

GONZALEZ, P ;

FERNANDEZ, D ;

POU, J ;

GARCIA, E ;

SERRA, J ;

LEON, B ;

PEREZAMOR, M .

THIN SOLID FILMS, 1992, 218 (1-2) :170-181

[6]

GUPTA SK, 1986, ACS S SERIES, V295

[7] LOW-TEMPERATURE GROWTH OF SIO2 THIN-FILM BY DOUBLE-EXCITATION PHOTO-CVD [J].

INOUE, K ;

MICHIMORI, M ;

OKUYAMA, M ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06) :805-811

[8] CROSS-SECTIONS FOR 170.5-DEGREES BACKSCATTERING OF HE-4 FROM CARBON FOR HE-4 ENERGIES BETWEEN 1.6 AND 5.0 MEV [J].

LEAVITT, JA ;

MCINTYRE, LC ;

STOSS, P ;

ODER, JG ;

ASHBAUGH, MD ;

DEZFOULYARJOMANDY, B ;

YANG, ZM ;

LIN, Z .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 :776-779

[9] SILICON DIOXIDE DEPOSITION AT 100-DEGREES-C USING VACUUM ULTRAVIOLET-LIGHT [J].

MARKS, J ;

ROBERTSON, RE .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :810-812

[10]

McCrackin F., 1969, NATL BUR STAND TECH, V479

← 1 2 →