SILICON DIOXIDE DEPOSITION AT 100-DEGREES-C USING VACUUM ULTRAVIOLET-LIGHT

[1] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SIO2 AT 2-10 TORR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 197 - 199

[2] EFFECT OF ULTRAVIOLET IRRADIATION ON OPTICAL PROPERTIES OF SILICON OXIDE FILMS [J]. APPLIED OPTICS, 1965, 4 (08) : 971 - +

[3] CALLOWAY AR, 1986, SDTR8612 AER CORP TE

[4] PHOTO-CVD FOR VLSI ISOLATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) : 2146 - 2151

[5] HAMPSON RF, 1978, REACTION RARE PHOTOC

[6] The far ultraviolet spectra of methylsilanes [J]. CHEMICAL PHYSICS LETTERS, 1968, 1 (12) : 595 - 596

[7] HERZBERG G, 1966, ELECTRONIC SPECTRA E

[8] MARKS J, UNPUB

[9] MATTSON B, 1980, SOLID STATE TECHNOL, V23, P60

[10] DIRECT PHOTOCHEMICAL DEPOSITION OF SIO2 FROM THE SI2H6+O2 SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1234 - 1236

[1] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF SIO2 AT 2-10 TORR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 197 - 199

[2] EFFECT OF ULTRAVIOLET IRRADIATION ON OPTICAL PROPERTIES OF SILICON OXIDE FILMS [J]. APPLIED OPTICS, 1965, 4 (08) : 971 - +

[3] CALLOWAY AR, 1986, SDTR8612 AER CORP TE

[4] PHOTO-CVD FOR VLSI ISOLATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) : 2146 - 2151

[5] HAMPSON RF, 1978, REACTION RARE PHOTOC

[6] The far ultraviolet spectra of methylsilanes [J]. CHEMICAL PHYSICS LETTERS, 1968, 1 (12) : 595 - 596

[7] HERZBERG G, 1966, ELECTRONIC SPECTRA E

[8] MARKS J, UNPUB

[9] MATTSON B, 1980, SOLID STATE TECHNOL, V23, P60

[10] DIRECT PHOTOCHEMICAL DEPOSITION OF SIO2 FROM THE SI2H6+O2 SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1234 - 1236