Characterization of co-electrodeposited and selenized CIS (CuInSe2) thin films

被引：25

作者：

Fernandez, AM

Sebastian, PJ

Calixto, ME

Gamboa, SA

Solorza, O

机构：

[1] Univ Nacl Autonoma Mexico, IIM, LAB ENERGIA SOLAR, PHOTOVOLTA SYST GRP, TEMIXCO 62580, MORELOS, MEXICO

[2] INST POLITECN NACL, CTR INVEST & ESTUDIOS AVANZADOS, DEPT QUIM, MEXICO CITY 07000, DF, MEXICO

来源：

THIN SOLID FILMS | 1997年 / 298卷 / 1-2期

关键词：

electrical properties and measurements; selenium; structural properties; surface morphology;

D O I：

10.1016/S0040-6090(96)09310-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural, morphological, compositional and photoelectrochemical properties of co-electrodeposited and selenized CIS thin films were characterized using various techniques. As-deposited as well as selenized films exhibited a compact or a granular morphology depending on the composition. The film stoichiometry was improved after selenization at 550 degrees C in a tubular furnace, The film conductivity type, carrier concentration and flat-band potential were determined from the photoelectrochemical studies. The films are formed with a mixed composition of the binary as well as the ternary phases. From the results of these studies, a model is suggested for the superficial as well as the bulk conductivity types of the film. (C) 1997 Elsevier Science S.A.

引用

页码：92 / 97

页数：6

共 20 条

[1] Electrodeposition of In-Se, Cu-Se, and Cu-In-Se thin films [J].