Growth of SnO2 nanowires with uniform branched structures

被引：153

作者：

Wang, JX ^{[1
]}

Liu, DF ^{[1
]}

Yan, XQ ^{[1
]}

Yuan, HJ ^{[1
]}

Ci, LJ ^{[1
]}

Zhou, ZP ^{[1
]}

Gao, Y ^{[1
]}

Song, L ^{[1
]}

Liu, LF ^{[1
]}

Zhou, WY ^{[1
]}

Wang, G ^{[1
]}

Xie, SS ^{[1
]}

机构：

[1] Chinese Acad Sci, Ctr Condensed Matter Phys, Inst Phys, Beijing 100080, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

nanomaterials; semiconducting materials; crystal morphology;

D O I：

10.1016/j.ssc.2004.01.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SnO2 nanowires have been prepared using the active carbon reaction with the fine SnO2 powder at low temperature (700 degreesC). These nanowires show rectangular cross-section, with their widths ranging from 10 to 50 nm. Branched nanowires with definite included angle are also observed in these products. The morphology and microstructure of the single crystalline SnO2 nanowires and the branched nanowires are characterized by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selective area electron diffraction (SAED) and Raman spectrum. In addition, the possible growth mechanism of the SnO2 nanowires and branched nanowires is also discussed. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：89 / 94

页数：6

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