Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy

被引：3

作者：

Lee, JS

Iwai, S

Isshiki, H

Meguro, T

Sugano, T

Aoyagi, Y

机构：

[1] Inst. of Phys. and Chemical Research, Wako-shi, Saitama 351-01, 2-1, Hirosawa

来源：

APPLIED SURFACE SCIENCE | 1996年 / 103卷 / 03期

关键词：

D O I：

10.1016/0169-4332(96)00459-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Layer-by-layer growth on nominally oriented(111)A GaAs substrate has been performed by atomic layer epitaxy (ALE). Under enough AsH3 feeding, the growth rate saturation of one-fourth monolayer per cycle was observed at the T-g range between 560 degrees C and 600 degrees C and three-eighths of monolayer per cycle at the T-g range below 550 degrees C on (111)A substrate. The drastic change of the growth rate saturation at around 550 degrees C indicates some kinds of surface reconstructions or site occupation on (111)A surface during AsH3 supply.

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收藏

页码：275 / 278

页数：4

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