CRYSTALLOGRAPHIC SELECTIVE GROWTH OF GAAS BY ATOMIC LAYER EPITAXY

被引：30

作者：

ISSHIKI, H

AOYAGI, Y

SUGANO, T

IWAI, S

MEGURO, T

机构：

[1] Frontier Research Program, Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama 351-01

[2] Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama 351-01

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.110738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found high crystallographic selectivity in atomic layer epitaxy (ALE) growth of GaAs, in comparison with other epitaxial growth methods. In the temperature dependence of the GaAs growth rate, no GaAs growth on the GaAs (111) A and (110) planes was observed in the high temperature range under the condition of GaAs ALE growth on GaAs (100) plane. Also we discussed the mechanism of GaAs growth selectivity, which was believed to be caused by growth limitation due to As desorption. Due to the self-limiting effect and the high selectivity of ALE growth, trapezoidal-shaped GaAs/AlGaAs quantum wire structures, with 20 nm thickness and 50 nm width, were successfully realized.

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页码：1528 / 1530

页数：3

相关论文

共 11 条

[1] RECENT PROGRESS IN ATOMIC LAYER EPITAXY OF III-V COMPOUNDS [J].

BEDAIR, SM ;

MCDERMOTT, BT ;

IDE, Y ;

KARAM, NH ;

HASHEMI, H ;

TISCHLER, MA ;

TIMMONS, M ;

TARN, JCL ;

ELMASRY, N .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :182-189

[2]

DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[3] LATERAL QUANTUM-WELL WIRES FABRICATED BY SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FUKUI, T ;

ANDO, S ;

FUKAI, YK .

APPLIED PHYSICS LETTERS, 1990, 57 (12) :1209-1211

[4] SIDEWALL GROWTH BY ATOMIC LAYER EPITAXY [J].

IDE, Y ;

MCDERMOTT, BT ;

HASHEMI, M ;

BEDAIR, SM ;

GOODHUE, WD .

APPLIED PHYSICS LETTERS, 1988, 53 (23) :2314-2316

[5] ATOMIC LAYER EPITAXY OF ALAS USING DIMETHYLALUMINUMHYDRIDE TRIMETHYLALUMINUM MIXTURE AS THE AL SOURCE [J].

ISHIZAKI, M ;

KANO, N ;

YOSHINO, J ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (3B) :L428-L430

[6] MONOLAYER GROWTH AND DIRECT WRITING OF GAAS BY PULSED LASER METALORGANIC VAPOR-PHASE EPITAXY [J].

IWAI, S ;

MEGURO, T ;

DOI, A ;

AOYAGI, Y ;

NAMBA, S .

THIN SOLID FILMS, 1988, 163 :405-408

[7] SINGLE QUANTUM WIRE SEMICONDUCTOR-LASERS [J].

KAPON, E ;

SIMHONY, S ;

BHAT, R ;

HWANG, DM .

APPLIED PHYSICS LETTERS, 1989, 55 (26) :2715-2717

[8] APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES [J].

LEBENS, JA ;

TSAI, CS ;

VAHALA, KJ ;

KUECH, TF .

APPLIED PHYSICS LETTERS, 1990, 56 (26) :2642-2644

[9] FABRICATION OF GAAS QUANTUM WIRES ON EPITAXIALLY GROWN V-GROOVES BY METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION [J].

TSUKAMOTO, S ;

NAGAMUNE, Y ;

NISHIOKA, M ;

ARAKAWA, Y .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) :533-535

[10] INGAP/GAAS SINGLE QUANTUM WELL STRUCTURE GROWTH ON GAAS FACET WALLS BY CHLORIDE ATOMIC LAYER EPITAXY [J].

USUI, A ;

SUNAKAWA, H ;

STUTZLER, FJ ;

ISHIDA, K .

APPLIED PHYSICS LETTERS, 1990, 56 (03) :289-291