Can proximity x-ray lithography print 35 nm features? Yes

被引:21
作者
Khan, M [1 ]
Han, G
Tsvid, G
Kitayama, T
Maldonado, J
Cerrina, F
机构
[1] Univ Wisconsin, Dept ECE, Madison, WI 53706 USA
[2] Etec Corp, Hayward, CA USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1418407
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the results of our effort to extend proximity x-ray lithography (PXL) to 35 nm using a harder energy spectrum, and choosing the appropriate materials for the mask and the resist to match the transmission and absorption at higher energies. Previous studies [M. Kahn et al., J. Vac. Sci. Technol. B 17, 3426 (1999); T. Kitayama, J. Vac. Sci. Technol. B 18, 2950 (2000)] have shown that PXL is capable of printing 50 nm features, and in this study, we extend that work to show that PXL can indeed be used for 35 nm generation. We investigate the use of higher energy radiation, in conjunction with novel resist materials, to deliver the 35 nm node and provide a set of requirements to achieve that goal. (C) 2001 American Vacuum Society.
引用
收藏
页码:2423 / 2427
页数:5
相关论文
共 10 条
[1]   Direct measurement of the effect of substrate photoelectrons in x-ray nanolithography [J].
Carter, DJD ;
Pepin, A ;
Schweizer, MR ;
Smith, HI ;
Ocola, LE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2509-2513
[2]   Application of X rays to nanolithography [J].
Cerrina, F .
PROCEEDINGS OF THE IEEE, 1997, 85 (04) :644-651
[3]  
GOODMAN JW, 1996, INTRO FOURIER OPTICS, P87
[4]   New results in high energy proximity x-ray lithography [J].
Khan, M ;
Han, G ;
Maldonado, J ;
Cerrina, F .
EMERGING LITHOGRAPHIC TECHNOLOGIES V, 2001, 4343 :176-181
[5]   Extension of x-ray lithography to 50 nm with a harder spectrum [J].
Khan, M ;
Han, G ;
Bollepalli, SB ;
Cerrina, F ;
Maldonado, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :3426-3432
[6]  
KHAN M, 1997, CNTECH TOOLSET USERS
[7]   Proposal for a 50 nm proximity x-ray lithography system and extension to 35 nm by resist material selection [J].
Kitayama, T ;
Itoga, K ;
Watanabe, Y ;
Uzawa, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :2950-2954
[8]   SPURIOUS EFFECTS CAUSED BY CONTINUOUS RADIATION AND EJECTED ELECTRONS IN X-RAY LITHOGRAPHY [J].
MALDONADO, JR ;
COQUIN, GA ;
MAYDAN, D ;
SOMEKH, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1329-1331
[9]  
Moreau W.M., 2012, Semiconductor lithography: principles, practices, and materials
[10]   PARAMETRIC MODELING OF PHOTOELECTRON EFFECTS IN X-RAY-LITHOGRAPHY [J].
OCOLA, LE ;
CERRINA, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2839-2844