Deposition of thin films of different oxides of copper by RF reactive sputtering and their characterization

Thin films of Cu2O and CuO are deposited by RF reactive sputtering at different substrate temperatures. Crystalline phases are identified by grazing angle X-ray diffraction (GAXRD). It shows that Cu2O phase is prominent at the substrate temperature corresponding to 30 degrees C (no deliberate heating of the substrate) and 150 degrees C. CuO phase is obtained at a substrate temperature of 300 degrees C. The band gap of the films are found by optical absorption method. Surface morphology of the films are characterized by atomic force microscopy (AFM). Stoichiometric analysis is done by elastic recoil detection analysis (ERDA) technique with high-energy heavy ion beam. (C) 2000 Elsevier Science Ltd. All rights reserved.