Depth profile analysis of porous Si film by ERDA using a Delta E-E detector telescope

被引：3

作者：

Avasthi, DK

Hui, SK

Subramaniyam, ET

Mehta, BR

机构：

[1] UNIV CALCUTTA,DEPT PHYS,CALCUTTA 700009,W BENGAL,INDIA

[2] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM LAB,NEW DELHI 110067,INDIA

来源：

VACUUM | 1996年 / 47卷 / 09期

关键词：

D O I：

10.1016/0042-207X(96)00154-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A complete analytical study as well as depth profiling of the constituent elements of a porous Si layer have been carried our by elastic recoil detection analysis using 100 MeV Ag ions and a Delta E-E detector telescope. Quantitative estimates of elements H, C, N, O, F, Mg and Si in a porous Si film have been made. The analysis of data indicates that the lowest detection limit of the technique is 8 x 10(-4) at% with an inaccuracy of 15%. Copyright (C) 1996 Elsevier Science Ltd.

引用

收藏

页码：1061 / 1064

页数：4

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