HYDROGEN PROFILING AND THE STOICHIOMETRY OF AN A-SINX-H FILM

被引：22

作者：

AVASTHI, DK ^{[1
]}

ACHARYA, MG ^{[1
]}

TAREY, RD ^{[1
]}

MALHOTRA, LK ^{[1
]}

MEHTA, GK ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,THIN FILM LAB,NEW DELHI 110016,INDIA

来源：

VACUUM | 1995年 / 46卷 / 03期

关键词：

D O I：

10.1016/0042-207X(94)00056-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stoichiometry of a-SiNx:H films is determined by conventional elastic recoil detection analysis (ERDA) using 90 MeV Ni-58 ions. Hydrogen depth profiling indicated that the non-uniformity in H concentration across the film thickness is about 12%. The present experiment indicated the capability of conventional ERDA for simultaneous multi-element detection in a thin film sample (having well-separated masses) without the use of a sophisticated detection system.

引用

页码：265 / 267

页数：3

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