Effect of post deposition annealing on the optical properties of HfOxNy films

被引：40

作者：

Liu, M. ^{[1
]}

Fang, Q.

He, G.

Li, L.

Zhu, L. Q.

Li, G. H.

Zhang, L. D.

机构：

[1] Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China

[2] UCL, London WC1E 7JE, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2202689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report in this letter that Hafnium oxynitride (HfO(x)N(y)) gate dielectrics were prepared by radio frequency (RF) reactive magnetron sputtering and optical properties of the HfO(x)N(y) thin films were investigated by spectroscopic ellipsometry with photon energy of 0.75-6.5 eV at room temperature. The investigations showed that the annealing temperatures have a strong effect on the optical properties of HfO(x)N(y) thin films. With increased annealing temperature, the refractive index n is observed to increase, while the extinction coefficient k decreases, respectively. The changes of the complex dielectric functions and the optical band gap E(g) with the annealing temperature are also discussed.(c) 2006 American Institute of Physics.

引用

页数：3

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