Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics

被引：157

作者：

Kang, CS ^{[1
]}

Cho, HJ ^{[1
]}

Onishi, K ^{[1
]}

Nieh, R ^{[1
]}

Choi, R ^{[1
]}

Gopalan, S ^{[1
]}

Krishnan, S ^{[1
]}

Han, JH ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Ctr Microelect Res, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 14期

关键词：

D O I：

10.1063/1.1510155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hafnium oxynitride (HfOxNy) gate dielectric was prepared using reactive sputtering followed by postdeposition annealing at 650 degreesC in a N-2 ambient. Nitrogen incorporation in the dielectric was confirmed by x-ray photoelectron spectroscopy analysis. In comparison to HfO2 of the same physical thickness, HfOxNy gate dielectric showed lower equivalent oxide thickness (EOT) and lower leakage density (J). Even after a high-temperature postmetal anneal at 950 degreesC, an EOT of 9.6 Angstrom with J of 0.8 mA/cm(2) @-1.5 V was obtained. In contrast, J of similar to20 mA/cm(2) @-1.5 V for HfO2 with an EOT of 10 Angstrom was observed. The lower leakage current and superior thermal stability of HfOxNy can be attributed to the formation of silicon-nitrogen bonds at the gate dielectric/Si interface and strengthened immunity to oxygen diffusion by the incorporated nitrogen. (C) 2002 American Institute of Physics.

引用

页码：2593 / 2595

页数：3

共 13 条

[1] PREPARATION OF NITRIDE FILMS BY AR+-ION BOMBARDMENT OF METALS IN NITROGEN ATMOSPHERE [J].

BABA, Y ;

SASAKI, TA ;

TAKANO, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (05) :2945-2948

[2] Structural and electrical properties of HfO2 with top nitrogen incorporated layer [J].

Cho, HJ ;

Kang, CS ;

Onishi, K ;

Gopalan, S ;

Nieh, R ;

Choi, R ;

Krishnan, S ;

Lee, JC .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (05) :249-251

[3] Characteristics of TaOxNy gate dielectric with improved thermal stability [J].

Cho, HJ ;

Park, DG ;

Yeo, IS ;

Roh, JS ;

Park, JW .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B) :2814-2818

[4] High-quality ultra-thin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation [J].

Choi, R ;

Kang, CS ;

Lee, BH ;

Onishi, K ;

Nieh, R ;

Gopalan, S ;

Dharmarajan, E ;

Lee, JC .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :15-16

[5] HOT-CARRIER EFFECTS IN MOSFETS WITH NITRIDED-OXIDE GATE-DIELECTRICS PREPARED BY RAPID THERMAL-PROCESSING [J].

HORI, T ;

YASUI, T ;

AKAMATSU, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (01) :134-147

[6] MOSFET devices with polysilicon on single-layer HfO2 high-k dielectrics [J].

Kang, LG ;

Onishi, K ;

Jeon, YJ ;

Lee, BH ;

Kang, CS ;

Qi, WJ ;

Nieh, R ;

Gopalan, S ;

Choi, R ;

Lee, JC .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :35-38

[7] Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100) [J].

Kirsch, PD ;

Kang, CS ;

Lozano, J ;

Lee, JC ;

Ekerdt, JG .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4353-4363

[8] Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing [J].

Lee, BH ;

Kang, LG ;

Nieh, R ;

Qi, WJ ;

Lee, JC .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1926-1928

[9]

Luan H. F., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P141, DOI 10.1109/IEDM.1999.823865

[10] ELECTRICAL CHARACTERISTICS OF RAPID THERMAL NITRIDED-OXIDE GATE N-MOSFETS AND P-MOSFETS WITH LESS-THAN 1 ATOM-PERCENT NITROGEN CONCENTRATION [J].

MOMOSE, HS ;

MORIMOTO, T ;

OZAWA, Y ;

YAMABE, K ;

IWAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (04) :546-552

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