MOSFET devices with polysilicon on single-layer HfO2 high-k dielectrics

被引：141

作者：

Kang, LG ^{[1
]}

Onishi, K ^{[1
]}

Jeon, YJ ^{[1
]}

Lee, BH ^{[1
]}

Kang, CS ^{[1
]}

Qi, WJ ^{[1
]}

Nieh, R ^{[1
]}

Gopalan, S ^{[1
]}

Choi, R ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOSFETs and MOSCAPs of a single-layer thin HfO2 gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage current and equivalent oxide thickness (EOT) of HfO2 remain low (EOT of 12.0 Angstrom HfO2 with 1X10(-3) A/cm(2) at Vg=1.0V). Reasonable N- and P-MOSFET characteristics such as subthreshold swing of 74mV/decade and output currents were also demonstrated.

引用

页码：35 / 38

页数：4

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