ULTRA-THIN TA2O5 DIELECTRIC FILM FOR HIGH-SPEED BIPOLAR MEMORIES

被引：49

作者：

NISHIOKA, Y ^{[1
]}

HOMMA, N ^{[1
]}

SHINRIKI, H ^{[1
]}

MUKAI, K ^{[1
]}

YAMAGUCHI, K ^{[1
]}

UCHIDA, A ^{[1
]}

HIGETA, K ^{[1
]}

OGIUE, K ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,OHME,TOKYO 198,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 09期

关键词：

D O I：

10.1109/T-ED.1987.23181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1957 / 1962

页数：6

共 15 条

[1]

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[2]

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[3]

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[4]

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[5] LEAKAGE-CURRENT INCREASE IN AMORPHOUS TA2O5 FILMS DUE TO PINHOLE GROWTH DURING ANNEALING BELOW 600-DEGREES-C [J].

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[6] INFLUENCE OF SIO2 AT THE TA2O5/SI INTERFACE ON DIELECTRIC CHARACTERISTICS OF TA2O5 CAPACITORS [J].

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[7] DIELECTRIC CHARACTERISTICS OF DOUBLE-LAYER STRUCTURE OF EXTREMELY THIN TA2O5/SIO2 ON SI [J].

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MUKAI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :410-415

[8]

NISHIOKA Y, 1984, 165TH EL SOC M, P160

[9] ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J].

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REISMAN, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6502-6508

[10] SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J].

OEHRLEIN, GS ;

DHEURLE, FM ;

REISMAN, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3715-3725

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