DIELECTRIC CHARACTERISTICS OF DOUBLE-LAYER STRUCTURE OF EXTREMELY THIN TA2O5/SIO2 ON SI

被引：72

作者：

NISHIOKA, Y

KIMURA, S

SHINRIKI, H

MUKAI, K

机构：

来源：

关键词：

D O I：

10.1149/1.2100469

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：410 / 415

页数：6

共 15 条

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[9] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
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