PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION

被引：439

作者：

HOLLINGER, G

HIMPSEL, FJ

机构：

[1] UNIV LYON 1,NATL PHYS NUCL & PHYS PARTICLES,F-69622 VILLEURBANNE,FRANCE

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：93 / 95

页数：3

共 22 条

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[5] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI
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[6] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE
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[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686
[7] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
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GRUNTHANER, PJ
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453
[8] ATOMIC-STRUCTURE AT THE (111) SI-SIO2 INTERFACE
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FELDMAN, LC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4884 - 4887
[9] SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES
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SUZUKI, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 470 - 472
[10] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING
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SCHWARZ, SA
SPICER, WE
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7007 - 7014

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