Characteristics of Al2O3 gate dielectric prepared by atomic layer deposition for giga scale CMOS DRAM devices

被引：27

作者：

Park, DG ^{[1
]}

Cho, HJ ^{[1
]}

Lim, C ^{[1
]}

Yeo, IS ^{[1
]}

Roh, JS ^{[1
]}

Kim, CT ^{[1
]}

Hwang, JM ^{[1
]}

机构：

[1] Hyundai Elect Ind Co Ltd, Memory R&D Div, Adv Proc Team, Ichonsi 467701, Kyoungki Do, South Korea

来源：

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIT.2000.852763

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper demonstrates characteristics of Al2O3 gate dielectric prepared by atomic layer deposition (ALD) for giga scale CMOS DRAM devices. Interface state density similar to 7x10(10) eV(-1)cm(2) near the midgap and excellent reliability with a low gate leakage current were attained from Al2O3/Si MOS system, p/nMOSFETs characteristics in terms of current drivability, transconductance (Gm), and subthreshold swing are described.

引用

页码：46 / 47

页数：2

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