Stable Scaffolds for Reacting Si Nanowires with Further Organic Functionalities while Preserving Si-C Passivation of Surface Sites

被引：33

作者：

Assad, Ossama ^{[1
,2
]}

Puniredd, Sreenivasa Reddy ^{[1
,2
]}

Stelzner, Thomas ^{[3
]}

Christiansen, Silke ^{[3
,4
]}

Haick, Hossam ^{[1
,2
]}

机构：

[1] Technion Israel Inst Technol, Dept Chem Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Russell Berrie Nanotechnol Inst, IL-32000 Haifa, Israel

[3] Inst Photon Technol eV, D-07745 Jena, Germany

[4] Max Planck Inst Mikrostruct Phys, D-06120 Halle, Germany

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 52期

关键词：

D O I：

10.1021/ja807888k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on Si NWs modified by covalent scaffolds, via Si C bonds, that give nearly full coverage of the Si atop sites and, at the same time, provide a route for subsequent functionalization. The obtained CH3 CH CH Si NWs exhibit superior oxidation resistance over Si NWs that are modified with CH3 or CH3 C C functionalities, which give nearly full coverage of the Si atop site too.

引用

页码：17670 / +

页数：3

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