Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires

被引：125

作者：

Haick, Hossam

Hurley, Patrick T.

Hochbaum, Allon I.

Yang, Peidong

Lewis, Nathan S.

机构：

[1] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA

[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 28期

关键词：

D O I：

10.1021/ja056785w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (±2 V). Copyright © 2006 American Chemical Society.

引用

页码：8990 / 8991

页数：2

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