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Copper on-top-sputtering induced modification of tin dioxide thin film gas sensors

被引：11
作者：
Galdikas, A
Mironas, A
Senuliene, D
Setkus, A
Göpel, W
Schierbaum, KD
机构：
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[2] Univ Tubingen, Inst Phys & Theoret Chem, D-7400 Tubingen, Germany
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1999年 / 58卷 / 1-3期
关键词：
gas sensors; tin oxide; thin films; doping effect;
D O I：
10.1016/S0925-4005(99)00093-3
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Thin film gas sensors based on purr tin dioxide were modified by sputtering of copper on the surface of the films. A gradual increase of an amount of the on-top-Cu produced increasing doping with uniform distribution of copper throughout entire tin oxide film. An increase of an amount of Cu caused continuous variation of the clean air resistance and the resistance response to CO and H-2 gases at various temperatures (290-550 K). For certain Cu amounts, samples shaw a large sensitivity towards one gas component while the cross-sensitivity remains small. The Cu-effect is discussed considering the variation of the Fermi level induced by doping and the clusters of topper on the surfaces of the grains. (C) 1999 Elsevier Science S.A. All rights reserved.
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收藏
页码：330 / 337
页数：8
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