Induced photopleochroism in semiconductors

被引：34

作者：

Kesamanly, FP ^{[1
]}

Rud', VY

Rud', YV

机构：

[1] St Petersburg State Tech Univ, St Petersburg 195257, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 05期

关键词：

D O I：

10.1134/1.1187718

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of experimental investigations of induced photopleochroism of elementary (Si, Ge), binary (III-V, II-VI), and more complicated diamond-like semiconductors (III-V-III-V solid solutions, ternary compounds I-III-VI and II-IV-V compounds) and photosensitive structures based on them are discussed and generalized. The laws of induced photopleochroism, which have been established for various types of phototransducers, and their relation with the parameters of semiconductors are analyzed. The possibilities of practical applications of induced polarization photosensitivity of isotropic semiconductors in polarimetric structures and in the diagnostics of the quality of the semiconductors are discussed. (C) 1999 American Institute of Physics.

引用

页码：483 / 503

页数：21

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