Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

被引：51

作者：

Sun, CK

Chiu, TL

Keller, S

Wang, G

Minsky, MS

DenBaars, SP

Bowers, JE

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,NFS CTR QUANTIZED ELECT STRUCT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.119568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN single-quantum wells. At room temperature, carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at room temperature was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum well interface. (C) 1997 American Institute of Physics.

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页码：425 / 427

页数：3

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