PICOSECOND DYNAMICS OF EXCITONS IN CUBIC GAN

被引：37

作者：

KLANN, R ^{[1
]}

BRANDT, O ^{[1
]}

YANG, H ^{[1
]}

GRAHN, HT ^{[1
]}

PLOOG, K ^{[1
]}

TRAMPERT, A ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-70569 STUTTGART, GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.52.R11615

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using time-resolved photoluminescence, we investigate the spectral and temporal behavior of the near-bandedge emission located at 3.255-3.27 eV of cubic GaN/GaAs(001) grown by plasma-assisted molecular-beam epitaxy. In contrast to transitions at lower energies, this narrow high-energy emission band exhibits an ultrafast dynamics on a picosecond time scale. The decay is characterized by a biexponential behavior composed of a fast initial component (15-40 ps) followed by a second, slower component (100-400 ps). We attribute the initial decay to radiative decay of free excitons and the relaxation towards bound states. The second slower component is assigned to the radiative recombination of these bound excitons. This interpretation is supported by intensity-dependent measurements.

引用

页码：11615 / 11618

页数：4

共 13 条

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