Local identification and mapping of the C49 and C54 titanium phases in submicron structures by micro-Raman spectroscopy

被引:30
作者
DeWolf, I
Howard, DJ
Lauwers, A
Maex, K
Maes, HE
机构
[1] IMEC, B-3001 Leuven
关键词
D O I
10.1063/1.118833
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, it is shown that micro-Raman spectroscopy allows easy, nondestructive determination of the C49 and C54 phase of titanium silicide with mu m resolution within single structures with area dimensions down to 1 x 1 mu m(2) and along isolated line structures with widths down to 0.25 mu m. The micro-Raman spectroscopy technique is used to study isolated 0.25-5-mu m-wide TiSi2 lines with thicknesses as small as 16 nm that are formed in both crystalline Si and polycrystalline Si. The phase mapping ability of the technique is demonstrated on several 80-mu m-long, 0.35-mu m-wide TiSi2 lines that are part of four-terminal line resistance devices created using complementary metal-oxide-semiconductor processing. (C) 1997 American Institute of Physics.
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页码:2262 / 2264
页数:3
相关论文
共 5 条
[1]  
DEWOLF I, 1996, MAT RES SOC S P, V427
[2]  
HEYEONGTAG J, 1992, J APPL PHYS, V71, P4629
[3]   IN-SITU X-RAY-DIFFRACTION ANALYSIS OF THE C49-C54 TITANIUM SILICIDE PHASE-TRANSFORMATION IN NARROW LINES [J].
ROY, RA ;
CLEVENGER, LA ;
CABRAL, C ;
SAENGER, KL ;
BRAUER, S ;
JORDANSWEET, J ;
BUCCHIGNANO, J ;
STEPHENSON, GB ;
MORALES, G ;
LUDWIG, KF .
APPLIED PHYSICS LETTERS, 1995, 66 (14) :1732-1734
[4]   A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines [J].
Saenger, KL ;
Cabral, C ;
Clevenger, LA ;
Roy, RA ;
Wind, S .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) :7040-7044
[5]   MULTIPHONON RAMAN-SPECTRUM OF SILICON [J].
TEMPLE, PA ;
HATHAWAY, CE .
PHYSICAL REVIEW B, 1973, 7 (08) :3685-3697