STM and STS analysis of ZnO varistors

被引：2

作者：

Castro, MS ^{[1
]}

Suárez, MP ^{[1
]}

Aldao, CM ^{[1
]}

机构：

[1] Univ Nacl Mar del Plata, CONICET, INTEMA, Inst Invest Ciencia & Tecnol Mat, RA-7600 Mar Del Plata, Argentina

来源：

BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO | 2002年 / 41卷 / 01期

关键词：

STM; ZnO-varistors; Schottky barrier;

D O I：

10.3989/cyv.2002.v41.i1.713

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO-Varistors have been studied by scanning tunnelling microscopy and spectroscopy. Tunnelling current-voltage characteristics indicate that grains present a rectifying behaviour. Since the prebreakdown zone is controlled by Schottky barriers formed by intergranular states, current density vs. temperature curves were fitted considering the tunnelling current through these barriers. Then, the Schottky barrier heights determined using the model are compared with the barrier heights obtained from the scanning tunnelling spectroscopy analysis in the grain boundary.

引用

页码：143 / 146

页数：4

共 12 条

[1] Thermionic, tunnelling, and polarization currents in zinc oxide varistors [J].