Field electron emission from amorphous carbon films grown in pure methane plasma

被引:13
作者
Baek, YG
Ikuno, T
Ryu, JT
Honda, S
Katayama, M
Oura, K
Hirao, T
机构
[1] Osaka Univ, Dept Elect Engn, Fac Engn, Suita, Osaka 5650871, Japan
[2] Taegu Univ, Dept Comp & Commun Engn, Kyungpook 712714, South Korea
[3] Osaka Univ, Dept Elect Engn, Fac Engn, Suita, Osaka 5650871, Japan
关键词
amorphous carbon films; field electron emission; methane plasma; graphite crystallite growth; surface morphology;
D O I
10.1016/S0169-4332(01)00786-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By using RF plasma-enhanced chemical vapor deposition, amorphous carbon films were grown in pure methane plasma. Field emission of the films were examined as a function of substrate temperature. It was found that the emission current from the samples prepared at substrate temperatures higher than 600 degreesC were considerably improved. According to the results by Raman spectroscopy, growth of graphite crystallites were promoted with high substrate temperatures. Moreover, the surface morphology was abruptly changed at high substrate temperatures over 600 degreesC. We discuss the field emission characteristics of the amorphous carbon films with regard to the structural features and the surface morphology. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:243 / 247
页数:5
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