On the stability of organic field-effect transistor materials

被引:16
作者
Schön, JH [1 ]
机构
[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.1421230
中图分类号
O59 [应用物理学];
学科分类号
摘要
Stability and degradation of transistor performance of devices based on pentacene and alpha -sexithiophene are investigated. In order to distinguish between effects at grain boundaries and material issues, macroscopic bicrystals were used, where transistors were prepared on a single grain as well as across a single grain boundary. The main reason for performance instabilities is the formation of oxygen-related trapping states at the grain boundary upon exposure to air. However, especially in the case of pentacene, stable hole transport properties are observed. (C) 2001 American Institute of Physics.
引用
收藏
页码:4163 / 4164
页数:2
相关论文
共 18 条
[1]  
CRONE B, 2000, NATURE, V403, P523
[2]   Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators [J].
Dimitrakopoulos, CD ;
Purushothaman, S ;
Kymissis, J ;
Callegari, A ;
Shaw, JM .
SCIENCE, 1999, 283 (5403) :822-824
[3]   High-performance all-polymer integrated circuits [J].
Gelinck, GH ;
Geuns, TCT ;
de Leeuw, DM .
APPLIED PHYSICS LETTERS, 2000, 77 (10) :1487-1489
[4]   DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT [J].
GOODMAN, NB ;
FRITZSCHE, H ;
OZAKI, H .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :599-604
[5]   ALL-ORGANIC FIELD-EFFECT TRANSISTORS MADE OF PI-CONJUGATED OLIGOMERS AND POLYMERIC INSULATORS [J].
HOROWITZ, G ;
DELOFFRE, F ;
GARNIER, F ;
HAJLAOUI, R ;
HMYENE, M ;
YASSAR, A .
SYNTHETIC METALS, 1993, 54 (1-3) :435-445
[6]  
Horowitz G, 1998, ADV MATER, V10, P365, DOI 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO
[7]  
2-U
[8]   MELT PROCESSABLE POLYMER ELECTRONICS [J].
INGANAS, O ;
GUSTAFSSON, G ;
SVENSSON, C .
SYNTHETIC METALS, 1991, 41 (03) :1095-1101
[9]  
Klauk H, 2000, SOLID STATE TECHNOL, V43, P63
[10]   Physical vapor growth of centimeter-sized crystals of α-hexathiophene [J].
Kloc, C ;
Simpkins, PG ;
Siegrist, T ;
Laudise, RA .
JOURNAL OF CRYSTAL GROWTH, 1997, 182 (3-4) :416-427