Growth kinetics and crystal structure of semiconductor nanowires

被引：282

作者：

Dubrovskii, V. G. ^{[1
,2
]}

Sibirev, N. V. ^{[1
]}

Harmand, J. C. ^{[3
]}

Glas, F. ^{[3
]}

机构：

[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] CNRS LPN, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 23期

关键词：

crystal structure; elemental semiconductors; gallium arsenide; III-V semiconductors; nanotechnology; nanowires; semiconductor growth; semiconductor quantum wires; silicon; solid-state phase transformations;

D O I：

10.1103/PhysRevB.78.235301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine the growth conditions under which the formation of nanowires is possible. General expression for the nanowire growth rate as function of its radius and the growth conditions is obtained and analyzed. The model also describes the transformation from cubic to hexagonal crystal phase of nanowires. It is shown that the observed crystal structure is controlled mainly by the growth kinetics. Structural diagrams and probabilities of cubic and hexagonal phase formation are calculated as functions of supersaturation and nanowire radius within the plausible range of material parameters. Numerical estimates for the domains of phase mixing and phase purity are presented and analyzed.

引用

页数：10

共 43 条

[1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].

Akiyama, T ;

Sano, K ;

Nakamura, K ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278

[2] Structural stability and electronic structures of InP nanowires: Role of surface dangling bonds on nanowire facets [J].

Akiyama, Toru ;

Nakamura, Kohji ;

Ito, Tomonori .

PHYSICAL REVIEW B, 2006, 73 (23)

[3]

[Anonymous], 1988, PHYS SURFACES

[4] One-dimensional steeplechase for electrons realized [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

NANO LETTERS, 2002, 2 (02) :87-89

[5] Vertical wrap-gated nanowire transistors [J].

Bryllert, T ;

Wernersson, LE ;

Löwgren, T ;

Samuelson, L .

NANOTECHNOLOGY, 2006, 17 (11) :S227-S230

[6] Growth temperature dependence of MBE-grown ZnSe nanowires [J].

Chan, S. K. ;

Cai, Y. ;

Wang, N. ;

Sou, I. K. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :866-870

[7] Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].

Dick, KA ;

Deppert, K ;

Mårtensson, T ;

Mandl, B ;

Samuelson, L ;

Seifert, W .

NANO LETTERS, 2005, 5 (04) :761-764

[8] Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires [J].

Dubrovskii, V. G. ;

Sibirev, N. V. .

PHYSICAL REVIEW B, 2008, 77 (03)

[9] Diffusion-controlled growth of semiconductor nanowires: Vapor pressure versus high vacuum deposition [J].

Dubrovskii, V. G. ;

Sibirev, N. V. ;

Suris, R. A. ;

Cirlin, G. E. ;

Harmand, J. C. ;

Ustinov, V. M. .

SURFACE SCIENCE, 2007, 601 (18) :4395-4401

[10] Growth of GaAs nanoscale whiskers by magnetron sputtering deposition [J].

Dubrovskii, VG ;

Soshnikov, IP ;

Sibirev, NV ;

Cirlin, GE ;

Ustinov, VM .

JOURNAL OF CRYSTAL GROWTH, 2006, 289 (01) :31-36

← 1 2 3 4 5 →