Atomistic processes in the early stages of thin-film growth

被引:904
作者
Zhang, ZY
Lagally, MG
机构
[1] UNIV WISCONSIN,DEPT MAT SCI & ENGN,MADISON,WI 53706
[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
关键词
D O I
10.1126/science.276.5311.377
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Growth of thin films from atoms deposited from the gas phase is intrinsically a non-equilibrium phenomenon governed by a competition between kinetics and thermodynamics. Precise control of the growth and thus of the properties of deposited films becomes possible only after an understanding of this competition is achieved. Here, the atomic nature of the most important kinetic mechanisms of film growth is explored. These mechanisms include adatom diffusion on terraces, along steps, and around island corners; nucleation and dynamics of the stable nucleus; atom attachment to and detachment from terraces and islands; and interlayer mass transport. Ways to manipulate the growth kinetics in order to select a desired growth mode are briefly addressed.
引用
收藏
页码:377 / 383
页数:7
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