Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film

被引:101
作者
Cho, CR [1 ]
Lee, WJ [1 ]
Yu, BG [1 ]
Kim, BW [1 ]
机构
[1] Elect & Telecommun Res Inst, Microelect Technol Lab, Taejon 305350, South Korea
关键词
D O I
10.1063/1.371114
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the thickness and annealing temperature dependence of the structural, morphological, compositional, and electrical properties including ferroelectric characteristics of Pb(Zr0.52Ti0.48)O-3 thin films deposited by a sol-gel method. The thickness and annealing temperature of the films were in the range of 0.12-0.36 mu m and 520-670 degrees C, respectively. The crystalline structure and growth behavior of the films have been studied by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. It is demonstrated that the weak ac electric field dependence of the permittivity of the films in terms of the Rayleigh law can be explained. The coercive field obtained from a sweep up and down schedule of the capacitance-voltage curves is asymmetrical and shows different behavior according to the annealing temperature and thickness. We also show that the activation energy coefficient, gamma, obtained from frequency dependent polarization-electric field hysteresis loops is related to the annealing temperature and thickness of the films. A low leakage current density (similar to 100 nA/cm(2) at 200 kV/cm) and low annealing temperature (similar to 520 degrees C) demonstrate the potential of the deposited films for integrated ferroelectric random access memory and piezoelectric sensor applications. (C) 1999 American Institute of Physics. [S0021-8979(99)06317-3].
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页码:2700 / 2711
页数:12
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