DIELECTRIC-PROPERTIES OF (111)LEAD AND (100)LEAD ZIRCONATE-TITANATE FILMS PREPARED BY SOL-GEL TECHNIQUE

Dielectric properties of [111]- and [100]-preferred lead-zirconate-titanate (PZT) films with thickness of 400 nm prepared by the sol-gel deposition technique have been investigated from ferroelectric random-access memory (FRAM) and dynamic random-access memory (DRAM) application standpoints. Remanent polarization of [111]-preferred film is 23.5 mu C/cm(2), which is somewhat higher than that of the [100]-preferred one. In contrast, the dielectric constant of [100]-preferred film is 730 which is larger than that of the [111]-preferred one. Thus, dielectric properties of PZT films are strongly dependent on their crystalline orientations. The [111]-preferred PZT film is appropriate for FRAM application and the [100]-preferred one is better for DRAM.