PREPARATION OF (100)-ORIENTED LEAD-ZIRCONATE-TITANATE FILMS BY SOL-GEL TECHNIQUE

被引:42
作者
AOKI, K
FUKUDA, Y
NISHIMURA, A
机构
[1] ULSI Technology Development, Texas Instruments Japan Limited, Inashiki-gun, IB, 300-04, 2350 Kihara, Miho-mura
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期
关键词
CRYSTALLINE-ORIENTED PZT; SOL-GEL; LEAKAGE CURRENT;
D O I
10.1143/JJAP.32.4147
中图分类号
O59 [应用物理学];
学科分类号
摘要
A sol-gel technique to control the crystalline orientation of lead-zirconate-titanate (PZT) films on Pt/Ti/SiO2/Si substrates has been studied. It is found that crystalline orientations of sintered films show strong dependence on their thicknesses and [100]-oriented films can be obtained by limiting their thicknesses to 100 nm. It is also found that thicker oriented films can be obtained by stacking up these oriented films. The scanning electron microscopy observation reveals that a well-oriented film surface is smoother than those of non oriented ones. The leakage current of the 240-nm-thick oriented film is about 7 nA/cm2 at 3 V, which is an order of magnitude lower than the best reported lanthanum and iron-doped PZT film.
引用
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页码:4147 / 4149
页数:3
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