Electrochemical Growth of InSb Nanowires and Report of a Single Nanowire Field Effect Transistor

被引：13

作者：

Khan, M. Ibrahim ^{[1
]}

Penchev, Miroslav ^{[2
]}

Jing, Xiaoye ^{[2
]}

Wang, Xu

Bozhilov, Krassimir N. ^{[3
]}

Ozkan, Mihrimah ^{[2
]}

Ozkan, Cengiz S. ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA

[3] Univ Calif Riverside, Cent Facil Adv Microscopy & Microanal, Riverside, CA 92521 USA

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2008年 / 3卷 / 02期

关键词：

Transistor; Nanowire; InSb; Templated Assembly;

D O I：

10.1166/jno.2008.203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InSb nanowires with high crystalline properties are synthesized with a diameter of 200 nm via direct current electrodeposition method inside the nanochannels of anodic alumina membranes. For the first time, the characteristics of field effect transistors based on InSb nanowires synthesized via electrochemistry is presented. A single InSb nanowire is used as a channel with gold source and drain contacts. A p(++) silicon substrate is used as the back-gate contact. Both nanowire synthesis and device fabrication are performed at room temperature and nanowire hole mobility is measured to be 57 CM(2)V(-1)S(-1) suggesting high structural quality of the as-grown InSb nanowires.

引用

页码：199 / 202

页数：4

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