High-performance ZnO nanowire field effect transistors

被引：237

作者：

Chang, Pai-Chun

Fan, Zhiyong

Chien, Chung-Jen

Stichtenoth, Daniel

Ronning, Carsten

Lu, Jia Grace ^{[1
]}

机构：

[1] Univ So Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA

[2] Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany

[3] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA

[4] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2357013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility.(c) 2006 American Institute of Physics.

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页数：3

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