Behavior of a charged two-level fluctuator in an Al-AlOx-Al single-electron transistor in the normal and superconducting state

被引：6

作者：

Kenyon, M ^{[1
]}

Cobb, JL

Amar, A

Song, D

Zimmerman, NM

Lobb, CJ

Wellstood, FC

机构：

[1] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20742 USA

[2] NIST, Gaithersburg, MD 20899 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1999年 / 9卷 / 02期

关键词：

D O I：

10.1109/77.783966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the behavior of a charged two-level fluctuator in an Al-AlOx-Al single-electron transistor (SET) in the normal state over a temperature range from 85 mK to 3 K. The fluctuator caused the SET's island charge to shift by Delta Q(o) = 0.1 +/- 0.025 e with an escape rate out of each state which was periodic in the gate voltage. We compare our results to a model which assumes the fluctuator resides in one of the tunnel junctions and discuss model predictions for when the device is in the superconducting state.

引用

页码：4261 / 4264

页数：4

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