Strain-induced channel waveguiding in bulk sapphire substrates

被引:9
作者
Liu, MJ [1 ]
Kim, HK [1 ]
机构
[1] Univ Pittsburgh, Dept Elect Engn, Pittsburgh, PA 15261 USA
关键词
D O I
10.1063/1.1413221
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the two-dimensional confinement of light in the channel region of a bulk sapphire substrate, which was formed by utilizing the photoelastic effect in sapphire induced by a sputter-deposited SiO2 film. The experimental result, combined with the simulation results, shows that the sputter-deposited SiO2 films are compressively stressed up to 10 GPa level and that a 1.0-mum-thick film, for example, induces an index change of 5x10(-3) in sapphire in the vertical direction. This amount of index change is found sufficient to support a fundamental mode at wavelengths of 1.54 mum or below. (C) 2001 American Institute of Physics.
引用
收藏
页码:2693 / 2695
页数:3
相关论文
共 12 条
[1]   Stress-induced vertical confinement of light in bulk GaAs and Si substrates [J].
Almashary, BA ;
Kim, HK .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) :1358-1360
[2]  
[Anonymous], 1998, HDB OPTICAL CONSTANT
[3]  
ASHCROFT NW, 1976, SOLID STATE PHYS, P125
[4]   Stress-induced lateral confinement of light in epitaxial BaTiO3 films grown by radio-frequency magnetron sputtering [J].
Barrios, P ;
Kim, HK .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1017-1019
[5]  
Bass M., 1995, HDB OPTICS, V2
[6]   Propagation of guided optical waves in thick GaN layers grown on (0001) sapphire [J].
Ciplys, D ;
Gaska, R ;
Shur, MS ;
Rimeika, R ;
Yang, JW ;
Khan, MA .
APPLIED PHYSICS LETTERS, 2000, 76 (16) :2232-2234
[7]   Thin-film-induced index change and channel waveguiding in epitaxial GaN films [J].
Kim, E ;
Lee, B ;
Nahhas, A ;
Kim, HK .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1747-1749
[8]   PHOTO-ELASTIC WAVEGUIDES AND THEIR EFFECT ON STRIPE-GEOMETRY GAAS-GA1-XALXAS LASERS [J].
KIRKBY, PA ;
SELWAY, PR ;
WESTBROOK, LD .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4567-4579
[9]  
LANDOLT H, 1969, NUMERICAL DATA FUNCT, V2, P8
[10]  
NYE JF, 1985, PHYS PROPERTIES CRYS, pCH8