Strain-induced channel waveguiding in bulk sapphire substrates

被引：9

作者：

Liu, MJ ^{[1
]}

Kim, HK ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Elect Engn, Pittsburgh, PA 15261 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 17期

关键词：

D O I：

10.1063/1.1413221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the two-dimensional confinement of light in the channel region of a bulk sapphire substrate, which was formed by utilizing the photoelastic effect in sapphire induced by a sputter-deposited SiO2 film. The experimental result, combined with the simulation results, shows that the sputter-deposited SiO2 films are compressively stressed up to 10 GPa level and that a 1.0-mum-thick film, for example, induces an index change of 5x10(-3) in sapphire in the vertical direction. This amount of index change is found sufficient to support a fundamental mode at wavelengths of 1.54 mum or below. (C) 2001 American Institute of Physics.

引用

页码：2693 / 2695

页数：3